2009-08-19 rev.2 . 3 page 1 IDP04E120 fast switching diode product summary v rrm 1200 v i f 4 a v f 1.65 v t jmax 150 c features ? 1200 v diode technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? easy paralleling ? pb-free lead plating; rohs compliant ? halogen-free according to iec61249-2-21 ? qualified according to jedec for target applications pin 1 pin 2 pin 3 c a - marking d04e120 type package ordering code IDP04E120 - maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1200 v continous forward current t c =25c t c =90c i f 11.2 7.1 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 28 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 16.5 power dissipation t c =25c t c =90c p tot 43.1 20.6 w operating and storage temperature t j , t st g -55...+150 c soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s t s 260 c p g -to220-2 p g -to220-2
2009-08-19 rev.2 . 3 page 2 IDP04E120 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 2.9 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =1200v, t j =25c v r =1200v, t j =150c i r - - - - 100 350 a forward voltage drop i f =4a, t j =25c i f =4a, t j =150c v f - - 1.65 1.7 2.15 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2009-08-19 rev.2 . 3 page 3 IDP04E120 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =800v, i f =4a, d i f /d t =750a/s, t j =25c v r =800v, i f =4a, d i f /d t =750a/s, t j =125c v r =800v, i f =4a, d i f /d t =750a/s, t j =150c t rr - - - 115 180 185 - - - ns peak reverse current v r =800v, i f = 4 a, d i f /d t =750a/s, t j =25c v r =800v, i f =4a, d i f /d t =750a/s, t j =125c v r =800v, i f =4a, d i f /d t =750a/s, t j =150c i rrm - - - 7.15 8 8.1 - - - a reverse recovery charge v r =800v, i f =4a, d i f /d t =750a/s, t j =25c v r =800v, i f =4a, d i f /d t =750a/s, t j =125c v r =800v, i f =4a, d i f /d t =750a/s, t j =150c q rr - - - 330 575 630 - - - nc reverse recovery softness factor v r =800v, i f =4a, d i f /d t =750a/s, t j =25c v r =800v, i f =4a, d i f /d t =750a/s, t j =125c v r =800v, i f =4a, d i f /d t =750a/s, t j =150c s - - - 6 7.8 7.8 - - -
2009-08-19 rev.2 . 3 page 4 IDP04E120 2 diode forward current i f = f( t c ) parameter: t j 150c 25 50 75 100 c 150 t c 0 1 2 3 4 5 6 7 8 9 10 a 12 i f 1 power dissipation p tot = f ( t c ) parameter: t j 150c 25 50 75 100 c 150 t c 0 5 10 15 20 25 30 35 w 45 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 2 v 3 v f 0 1 2 3 4 5 6 7 8 9 10 a 12 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1 1.2 1.4 1.6 1.8 2 v 2.4 v f 2a 4a 8a
2009-08-19 rev.2 . 3 page 5 IDP04E120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 50 100 150 200 250 300 350 400 ns 500 t rr 8a 4a 2a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 800v, t j = 125 c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 400 450 500 550 600 650 700 750 800 nc 900 q rr 2a 4a 8a 7 typ. reverse recovery current i rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 4 5 6 7 8 9 10 a 12 i rr 8a 4a 2a 8 typ. reverse recovery softness factor s = f(d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 2 4 6 8 10 12 14 16 20 s 8a 4a 2a
2009-08-19 rev.2 . 3 page 6 IDP04E120 9 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w IDP04E120 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2009-08-19 rev.2 . 3 page 7 to-220-2 IDP04E120
2009-08-19 rev.2 . 3 page 8 IDP04E120 published by infineon technologies ag 81726 munich, germany 81726 mnchen, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any ty pical values stated herein and/or any information regarding the application of the device, infineon technologies hereby d isclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infri ngement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, pleas e contact the nearest infineon technologies office ( www.infi neon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest inf ineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express wri tten approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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